Quantitative imaging of sheet resistance with a scanning near-field microwave microscope
Abstract
We describe quantitative imaging of the sheet resistance of metallic thin films by monitoring frequency shift and quality factor in a resonant scanning near-field microwave microscope. This technique allows fast acquisition of images at approximately 10 ms per pixel over a frequency range from 0.1 to 50 GHz. In its current configuration, the system can resolve changes in sheet resistance as small as 0.6 Ω/□ for 100 Ω/□ films. We demonstrate its use at 7.5 GHz by generating a quantitative sheet resistance image of a YBa2Cuoverflow="scroll">3O7-δ thin film on a 5 cm diam sapphire wafer.
- Publication:
-
Applied Physics Letters
- Pub Date:
- February 1998
- DOI:
- 10.1063/1.120918
- arXiv:
- arXiv:cond-mat/9712171
- Bibcode:
- 1998ApPhL..72..861S
- Keywords:
-
- 07.57.Yb;
- 84.37.+q;
- 74.76.Bz;
- 07.79.-v;
- 73.61.At;
- 73.50.Mx;
- 07.50.Yd;
- Measurements in electric variables;
- Scanning probe microscopes and components;
- Metal and metallic alloys;
- High-frequency effects;
- plasma effects;
- Condensed Matter - Materials Science;
- Condensed Matter - Superconductivity
- E-Print:
- 6 pages, 3 figures