Mechanism of porous-silicon luminescence
Abstract
We discuss the discrete spectrum induced by bulges on threadlike mesoscopic objects, using two models, a continuous hard-wall waveguide and a discrete tight-binding model with two sorts of atomic orbitals. We show that elongated bulges induce numerous quasibound states. In the discrete model we also evaluate the probability of transition between the localized states and extended ones of the ``valence'' band. We suggest this as a mechanism governing the porous-silicon luminescence. In addition, the model reproduces the dominance of nonradiative transitions, blueshift for finer textures, and luminiscence suppression at low temperatures.
- Publication:
-
Physical Review B
- Pub Date:
- January 1998
- DOI:
- 10.1103/PhysRevB.57.1382
- arXiv:
- arXiv:cond-mat/9709281
- Bibcode:
- 1998PhRvB..57.1382B
- Keywords:
-
- 78.55.Mb;
- 03.65.Ge;
- Porous materials;
- Solutions of wave equations: bound states;
- Condensed Matter - Mesoscopic Systems and Quantum Hall Effect
- E-Print:
- A LaTeX source file together with two ps figures. The paper is due to appear in Phys. Rev. B