Thermal Expansion and Grüneisen Parameters of Amorphous Silicon: A Realistic Model Calculation
Abstract
Using a realistic model, the mode Grüneisen parameters γ and the temperature dependent coefficient of linear thermal expansion α\(T\) are calculated for amorphous silicon. The resulting γ values differ from the crystalline case in having all diversity suppressed, except for a minority of high-frequency localized and low-frequency resonant modes. The latter have very large, mostly negative γ (up to -31), caused by volume-driven internal strain. As a result, the values for α\(T\) are lower than those of crystalline silicon and are sample dependent.
- Publication:
-
Physical Review Letters
- Pub Date:
- September 1997
- DOI:
- 10.1103/PhysRevLett.79.1885
- arXiv:
- arXiv:cond-mat/9708062
- Bibcode:
- 1997PhRvL..79.1885F
- Keywords:
-
- Condensed Matter - Disordered Systems and Neural Networks
- E-Print:
- 10 pages, RevTeX, 4 ps figures, Phys. Rev. Lett. (in press)