Metal-insulator transition in Si:X (X=P,B): Anomalous response to a magnetic field
Abstract
The zero-temperature magnetoconductivity of just-metallic Si:P scales with magnetic field H and dopant concentration n lying on a single universal curve: σ(n,H)/σ(n,0)=G[H-δΔn] with a magnetic-field crossover exponent δ~2. We note that Si:P, Si:B, and Si:As all have unusually large crossover exponents near 2, and suggest that this anomalously weak response to a magnetic field, Δnc~Hδ, is a common feature of uncompensated doped semiconductors.
- Publication:
-
Physical Review B
- Pub Date:
- September 1998
- DOI:
- 10.1103/PhysRevB.58.6692
- arXiv:
- arXiv:cond-mat/9706309
- Bibcode:
- 1998PhRvB..58.6692S
- Keywords:
-
- 71.30.+h;
- Metal-insulator transitions and other electronic transitions;
- Condensed Matter - Strongly Correlated Electrons
- E-Print:
- 4 pages (including figures)