Electron wave filters from inverse scattering theory
Abstract
Semiconductor heterostructures with prescribed energy dependence of the transmittance can be designed by combining: a) Padé approximant reconstruction of the S-matrix; b) inverse scattering theory for Schrödinger's equation; c) a unitary transformation which takes into account the variable mass effects. The resultant continuous concentration profile can be digitized into an easily realizable rectangular-wells structure. For illustration, we give the specifications of a 2 narrow band-pass 12-layer AlcGa1 - cAs filter with the high-energy peak more than twice narrower than the low-energy one.
- Publication:
-
EPL (Europhysics Letters)
- Pub Date:
- January 1997
- DOI:
- 10.1209/epl/i1997-00125-0
- arXiv:
- arXiv:cond-mat/9606209
- Bibcode:
- 1997EL.....37..151B
- Keywords:
-
- 85.30.De;
- 03.65.Nk;
- 73.20.Dx;
- Semiconductor-device characterization design and modeling;
- Scattering theory;
- Condensed Matter;
- Materials Theory
- E-Print:
- 4 pages, Revtex with one eps figure