Geometry and quantum delocalization of interstitial oxygen in silicon
Abstract
The problem of the geometry of interstitial oxygen in silicon is settled by proper consideration of the quantum delocalization of the oxygen atom around the bond-center position. The calculated infrared absorption spectrum accounts for the 517 and 1136 cm-1 bands in their position, character, and isotope shifts. The asymmetric line shape of the 517 cm-1 peak is also well reproduced. In addition a non-infrared-active symmetric-stretching mode is found at 596 cm-1. First-principles calculations are presented supporting the nontrivial quantum delocalization of the oxygen atom.
- Publication:
-
Physical Review B
- Pub Date:
- March 1995
- DOI:
- 10.1103/PhysRevB.51.7862
- arXiv:
- arXiv:cond-mat/9412079
- Bibcode:
- 1995PhRvB..51.7862A
- Keywords:
-
- 78.50.Ge;
- 63.20.Pw;
- 61.72.Ji;
- Localized modes;
- Point defects and defect clusters;
- Condensed Matter
- E-Print:
- uuencoded, compressed postscript file for the whole. 4 pages (figures included), accepted in PRB