Reflectionless tunneling through a double-barrier NS junction
Abstract
The resistance is computed of an NI1NI2S junction, where N is the normal metal, S the superconductor, and Ii the insulator or tunnel barrier (transmission probability per mode Γi). The ballistic case is considered, as well as the case that the region between the two barriers contains disorder (mean free path l, barrier separation L). It is found that the resistance at fixed Γ2 shows a minimum as a function of Γ1, whenΓ1 ≈√2 Γ2, provided l ⪆ Γ 2L. The minimum is explained in terms of the appearance of transmission eigenvalues close to one, analogous to the “reflectionless tunneling” through a NIS junction with a disordered normal region. The theory is supported by numerical simulations.
- Publication:
-
Physica B Condensed Matter
- Pub Date:
- December 1994
- DOI:
- 10.1016/0921-4526(94)90062-0
- arXiv:
- arXiv:cond-mat/9406034
- Bibcode:
- 1994PhyB..203..219M
- Keywords:
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- Condensed Matter
- E-Print:
- 10 pages, REVTeX-3.0, 6 postscript figures appended as self-extracting archive, INLO-PUB-940607m