Self-consistent electron subbands of GaAs/AlGaAs heterostructures in magnetic fields parallel to the interface
Abstract
The effect of strong magnetic fields parallel to GaAs/AlGaAs interface on the subband structure of a 2D electron layer is ivestigated theoretically. The system with two levels occupied in zero magnetic field is considered and the magnetic field induced depletion of the second subband is studied. The confining potential and the electron dispersion relations are calculated self-consistently, the electron- electron interaction is taken into account in the Hartree approximation.
- Publication:
-
Journal of Physics Condensed Matter
- Pub Date:
- April 1993
- DOI:
- 10.1088/0953-8984/5/15/001
- arXiv:
- arXiv:cond-mat/9304036
- Bibcode:
- 1993JPCM....5L.217J
- Keywords:
-
- Condensed Matter
- E-Print:
- written in LaTeX, 8 pages, 4 figs. available on request from smrcka@fzu.cs