Simple-layered high mobility field effect heterostructured two-dimensional electron device
Abstract
We present a two-dimensional electron heterostructure field effect device of simplistic design and ease of fabrication that displays high mobility electron transport. This is accomplished using a high efficacy contacting scheme and simple metallic overlapping gate, obviating dopant layers. The resultant devices demonstrate adjustable electron densities and mobilities larger than 8x106 cm2/V-sec at the highest densities of 2.4x1011/cm2. This device type provides an experimental avenue for studying electron correlations and may answer demands for routine fabrication of practical HEMTs.
- Publication:
-
arXiv e-prints
- Pub Date:
- March 2007
- DOI:
- 10.48550/arXiv.cond-mat/0703718
- arXiv:
- arXiv:cond-mat/0703718
- Bibcode:
- 2007cond.mat..3718W
- Keywords:
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- Condensed Matter - Mesoscopic Systems and Quantum Hall Effect;
- Condensed Matter - Materials Science
- E-Print:
- Applied Physics Letters 89, 242107 (2006)