Selective Epitaxial Growth of GaAs on Ge Substrates with a SiO2 Pattern
Abstract
We have selectively grown thin epitaxial GaAs films on Ge substrates with the aid of a 200 nm thin SiO2 mask layer. The selectively grown structures have lateral sizes ranging from 1 um width up to large areas of 1 by 1 mm2. The growth is fully selective, thanks to an optimized growth procedure, consisting of a 13 nm thin nucleation layer grown at high pressure, followed by low pressure growth of GaAs. This growth procedure inhibits the nucleation of GaAs on the mask area and is a good compromise between reduction of loading effects and inhibition of anti phase domain growth in the GaAs. Nevertheless, both microscopic and macroscopic loading effects can still be observed on x-section SEM images and profilometer measurements. X-ray diffraction and low temperature photoluminescence measurements demonstrate the good microscopic characteristics of the selectively grown GaAs.
- Publication:
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arXiv e-prints
- Pub Date:
- March 2007
- DOI:
- 10.48550/arXiv.cond-mat/0703664
- arXiv:
- arXiv:cond-mat/0703664
- Bibcode:
- 2007cond.mat..3664B
- Keywords:
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- Condensed Matter - Materials Science
- E-Print:
- 7 pages, 6 figures