Concentration-dependent mobility in organic field-effect transistors probed by infrared spectromicroscopy of the charge density profile
Abstract
The authors show that infrared imaging of the charge density profile in organic field-effect transistors (FETs) can probe transport characteristics which are difficult to access by conventional contact-based measurements. Specifically, they carry out experiments and modeling of infrared spectromicroscopy of poly(3-hexylthiophene) (P3HT) FETs in which charge injection is affected by a relatively low resistance of the gate insulators. They conclude that the mobility of P3HT has a power-law density dependence, which is consistent with the activated transport in disorder-induced tails of the density of states.
- Publication:
-
Applied Physics Letters
- Pub Date:
- May 2007
- DOI:
- 10.1063/1.2745223
- arXiv:
- arXiv:cond-mat/0703497
- Bibcode:
- 2007ApPhL..90v2108M
- Keywords:
-
- 85.30.Tv;
- Field effect devices;
- Condensed Matter - Materials Science
- E-Print:
- 3+ pages, 2 figures