Band-to-Band Tunneling in a Carbon Nanotube Metal-Oxide-Semiconductor Field-Effect Transistor Is Dominated by Phonon-Assisted Tunneling

Band-to-band tunneling (BTBT) devices have recently gained a lot of interest due to their potential for reducing power dissipation in integrated circuits. We have performed extensive simulations for the BTBT operation of carbon nanotube metal-oxide-semiconductor field-effect transistors (CNT-MOSFETs) using the non-equilibrium Green's functions formalism for both ballistic and dissipative quantum transport. In comparison with recently reported experimental data (Y. Lu et al, J. Am. Chem. Soc., v. 128, p. 3518-3519, 2006), we have obtained strong evidence that BTBT in CNT-MOSFETs is dominated by optical phonon assisted inelastic transport, which can have important implications on the transistor characteristics. It is shown that under large biasing conditions two-phonon scattering may also become important.