Triangular Mott-Hubbard Insulator Phases of Sn/Si(111) and Sn/Ge(111) Surfaces
Abstract
The ground state of Sn/Si(111) and Sn/Ge(111) surface α phases is reexamined theoretically, based on ab initio calculations where correlations are approximately included through the orbital dependence of the Coulomb interaction (in the local density+HubbardU approximation). The effect of correlations is to destabilize the vertical buckling in Sn/Ge(111) and to make the surface magnetic, with a metal-insulator transition for both systems. This signals the onset of a stable narrow gap Mott-Hubbard insulating state, in agreement with very recent experiments. Antiferromagnetic exchange is proposed to be responsible for the observed Γ-point photoemission intensity, as well as for the partial metallization observed above 60 K in Sn/Si(111). Extrinsic metallization of Sn/Si(111) by, e.g., alkali doping, could lead to a novel 2D triangular superconducting state of this and similar surfaces.
- Publication:
-
Physical Review Letters
- Pub Date:
- February 2007
- DOI:
- 10.1103/PhysRevLett.98.086401
- arXiv:
- arXiv:cond-mat/0703181
- Bibcode:
- 2007PhRvL..98h6401P
- Keywords:
-
- 71.30.+h;
- 71.27.+a;
- 73.20.At;
- 75.70.Rf;
- Metal-insulator transitions and other electronic transitions;
- Strongly correlated electron systems;
- heavy fermions;
- Surface states band structure electron density of states;
- Surface magnetism;
- Condensed Matter - Strongly Correlated Electrons
- E-Print:
- 4 pages, 4 figures