Electronic Structure of Epitaxial Graphene Layers on SiC: Effect of the Substrate
Abstract
A strong substrate-graphite bond is found in the first all-carbon layer by density functional theory calculations and x-ray diffraction for few graphene layers grown epitaxially on SiC. This first layer is devoid of graphene electronic properties and acts as a buffer layer. The graphene nature of the film is recovered by the second carbon layer grown on both the (0001) and (0001¯) 4H-SiC surfaces. We also present evidence of a charge transfer that depends on the interface geometry. Hence the graphene is doped and a gap opens at the Dirac point after three Bernal stacked carbon layers are formed.
- Publication:
-
Physical Review Letters
- Pub Date:
- September 2007
- DOI:
- 10.1103/PhysRevLett.99.126805
- arXiv:
- arXiv:cond-mat/0702311
- Bibcode:
- 2007PhRvL..99l6805V
- Keywords:
-
- 81.05.Uw;
- 71.20.-b;
- 71.15.Mb;
- Carbon diamond graphite;
- Electron density of states and band structure of crystalline solids;
- Density functional theory local density approximation gradient and other corrections;
- Condensed Matter - Materials Science
- E-Print:
- doi:10.1103/PhysRevLett.99.126805