Anisotropic electron spin lifetime in (In,Ga)As/GaAs (110) quantum wells
Abstract
Anisotropic electron spin lifetimes in strained undoped (In,Ga)As/GaAs (110) quantum wells of different widths and heights are investigated by time-resolved Faraday rotation and time-resolved transmission and are compared to the (001) orientation. From the suppression of spin precession as a function of transverse magnetic fields, the ratio of in-plane to out-of-plane spin lifetimes is calculated. While the ratio increases with In concentration in agreement with theory, an unprecedented high anisotropy of 480 is observed for the broadest quantum well at the low In concentration, when expressed in terms of spin relaxation times.
- Publication:
-
Physical Review B
- Pub Date:
- May 2007
- DOI:
- 10.1103/PhysRevB.75.193304
- arXiv:
- arXiv:cond-mat/0701104
- Bibcode:
- 2007PhRvB..75s3304S
- Keywords:
-
- 73.50.-h;
- 85.75.-d;
- 78.66.Fd;
- 78.47.+p;
- Electronic transport phenomena in thin films;
- Magnetoelectronics;
- spintronics: devices exploiting spin polarized transport or integrated magnetic fields;
- III-V semiconductors;
- Time-resolved optical spectroscopies and other ultrafast optical measurements in condensed matter;
- Condensed Matter - Materials Science
- E-Print:
- 4 pages, 4 figures, revised