Electrical spin injection and detection in an InAs quantum well
Abstract
The authors demonstrate fully electrical detection of spin injection in InAs quantum wells. A spin-polarized current is injected from a Ni81Fe19 thin film to a two-dimensional electron gas (2DEG) made of InAs based epitaxial multilayers. Injected spins accumulate and diffuse out in the 2DEG, and the spins are electrically detected by a neighboring Ni81Fe19 electrode. The observed spin diffusion length is 1.8μm at 20K. The injected spin polarization across the Ni81Fe19/InAs interface is 1.9% at 20K and remains at 1.4% even at room temperature. Their experimental results will contribute significantly to the realization of a practical spin field effect transistor.
- Publication:
-
Applied Physics Letters
- Pub Date:
- January 2007
- DOI:
- 10.1063/1.2430688
- arXiv:
- arXiv:cond-mat/0612575
- Bibcode:
- 2007ApPhL..90b2101K
- Keywords:
-
- indium compounds;
- III-V semiconductors;
- semiconductor quantum wells;
- spin polarised transport;
- nickel alloys;
- iron alloys;
- metallic thin films;
- two-dimensional electron gas;
- semiconductor epitaxial layers;
- spin dynamics;
- 73.63.Hs;
- 72.25.Dc;
- 73.21.Fg;
- 75.30.Ds;
- Quantum wells;
- Spin polarized transport in semiconductors;
- Spin waves;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- doi:10.1063/1.2430688