Extrinsic anisotropic magnetoresistance contribution to measured domain wall resistances of in-plane magnetized (Ga,Mn)As
Abstract
We demonstrate the presence of an important extrinsic anisotropic magnetoresistance contribution to the domain wall resistance recently measured in thin-film (Ga,Mn)As with in-plane magnetic anisotropy. Analytic results for simple domain wall orientations supplemented by numerical results for more general cases show that this previously omitted contribution can largely explain the observed negative resistance.
- Publication:
-
Physical Review B
- Pub Date:
- July 2007
- DOI:
- 10.1103/PhysRevB.76.035323
- arXiv:
- arXiv:cond-mat/0611780
- Bibcode:
- 2007PhRvB..76c5323R
- Keywords:
-
- 73.61.-r;
- 75.60.Ch;
- 75.50.Pp;
- 85.75.-d;
- Electrical properties of specific thin films;
- Domain walls and domain structure;
- Magnetic semiconductors;
- Magnetoelectronics;
- spintronics: devices exploiting spin polarized transport or integrated magnetic fields;
- Condensed Matter - Materials Science;
- Condensed Matter - Mesoscopic Systems and Quantum Hall Effect
- E-Print:
- 4 pages