Large inverse tunneling magnetoresistance in Co2Cr0.6Fe0.4Al/MgO/Co80Fe20 magnetic tunnel junctions
Abstract
Magnetic tunnel junctions with the layer sequence Co2Cr0.6Fe0.4Al/MgO/Co80Fe20 were fabricated by magnetron sputtering at room temperature (RT). The samples exhibit a large inverse tunneling magnetoresistance (TMR) effect of up to -66% at RT. The largest value of -84% at 20K reflects a rather weak influence of temperature. The dependence on the voltage drop shows an unusual behavior with two almost symmetric peaks at ±600mV with large inverse TMR ratios and small positive values around zero bias.
- Publication:
-
Applied Physics Letters
- Pub Date:
- April 2007
- DOI:
- 10.1063/1.2728034
- arXiv:
- arXiv:cond-mat/0611779
- Bibcode:
- 2007ApPhL..90p2512R
- Keywords:
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- 75.50.Bb;
- 75.47.-m;
- Fe and its alloys;
- Magnetotransport phenomena;
- materials for magnetotransport;
- Condensed Matter - Materials Science
- E-Print:
- doi:10.1063/1.2728034