Trapping Electrons in Electrostatic Traps over the Surface of 4He
Abstract
We have observed trapping of electrons in an electrostatic trap formed over the surface of liquid 4He. These electrons are detected by a Single Electron Transistor located at the center of the trap. We can trap any desired number of electrons between 1 and ∼30. By repeatedly (∼103 104 times) putting a single electron into the trap and lowering the electrostatic barrier of the trap, we can measure the effective temperature of the electron and the time of its thermalisation after heating up by incoherent radiation.
- Publication:
-
Journal of Low Temperature Physics
- Pub Date:
- August 2007
- DOI:
- 10.1007/s10909-007-9368-z
- arXiv:
- arXiv:cond-mat/0611756
- Bibcode:
- 2007JLTP..148..193R
- Keywords:
-
- Condensed Matter - Mesoscopic Systems and Quantum Hall Effect
- E-Print:
- Presented at QFS06 - Kyoto, to be published in J. Low Temp. Phys., 6 pages, 3 figures