Probing exciton localization in nonpolar GaN/AlN quantum dots by single-dot optical spectroscopy
Abstract
We present an optical spectroscopy study of nonpolar GaN/AlN quantum dots by time-resolved photoluminescence and by microphotoluminescence. Isolated quantum dots exhibit sharp emission lines, with linewidths in the 0.5-2meV range due to spectral diffusion. Such linewidths are narrow enough to probe the inelastic coupling of acoustic phonons to confined carriers as a function of temperature. This study indicates that the carriers are laterally localized on a scale that is much smaller than the quantum dot size. This conclusion is further confirmed by the analysis of the decay time of the luminescence.
- Publication:
-
Physical Review B
- Pub Date:
- March 2007
- DOI:
- 10.1103/PhysRevB.75.125306
- arXiv:
- arXiv:cond-mat/0611625
- Bibcode:
- 2007PhRvB..75l5306R
- Keywords:
-
- 78.67.Hc;
- 78.55.Cr;
- 78.47.+p;
- Quantum dots;
- III-V semiconductors;
- Time-resolved optical spectroscopies and other ultrafast optical measurements in condensed matter;
- Condensed Matter - Other Condensed Matter
- E-Print:
- doi:10.1103/PhysRevB.75.125306