Size-Dependent Fine-Structure Splitting in Self-Organized InAs/GaAs Quantum Dots
Abstract
A systematic variation of the exciton fine-structure splitting with quantum dot size in single InAs/GaAs quantum dots grown by metal-organic chemical vapor deposition is observed. The splitting increases from -80 to as much as 520μeV with quantum dot size. A change of sign is reported for small quantum dots. Model calculations within the framework of eight-band k·p theory and the configuration interaction method were performed. Different sources for the fine-structure splitting are discussed, and piezoelectricity is pinpointed as the only effect reproducing the observed trend.
- Publication:
-
Physical Review Letters
- Pub Date:
- December 2005
- DOI:
- 10.1103/PhysRevLett.95.257402
- arXiv:
- arXiv:cond-mat/0610436
- Bibcode:
- 2005PhRvL..95y7402S
- Keywords:
-
- 78.67.Hc;
- 71.70.Gm;
- 73.21.La;
- 78.60.Hk;
- Quantum dots;
- Exchange interactions;
- Cathodoluminescence ionoluminescence;
- Condensed Matter - Materials Science
- E-Print:
- 5 pages, 5 figures