Doping-driven Mott transition in the one-band Hubbard model
Abstract
A powerful diagrammatic impurity solver is shown to permit a systematic study of the doping-driven Mott transition in a one-band Hubbard model within the framework of single-site dynamical mean-field theory. At small dopings and large interaction strengths, we are able to access low enough temperatures that a reliable extrapolation to temperature T=0 may be performed, and ground state energies of insulating and metallic states may be compared. We find that the T=0 doping-driven transition is of second order and is characterized by an interaction-strength dependent electronic compressibility, which vanishes at the critical interaction strength of the half filled model. Over wide parameter ranges, the compressibility is substantially reduced relative to the noninteracting system. The metal-insulator transition is characterized by the appearance of in-gap states, but these are relevant only for very low dopings of less than 3%.
- Publication:
-
Physical Review B
- Pub Date:
- February 2007
- DOI:
- 10.1103/PhysRevB.75.085108
- arXiv:
- arXiv:cond-mat/0610401
- Bibcode:
- 2007PhRvB..75h5108W
- Keywords:
-
- 71.10.Fd;
- Lattice fermion models;
- Condensed Matter - Strongly Correlated Electrons
- E-Print:
- Published version