Influence of topography and Co domain walls on the magnetization reversal of the FeNi layer in FeNi/Al2O3/Co magnetic tunnel junctions
Abstract
We have studied the magnetization reversal dynamics of FeNi/Al2O3/Co magnetic tunnel junctions deposited on step-bunched Si substrates using magneto-optical Kerr effect and time-resolved x-ray photoelectron emission microscopy combined with x-ray magnetic circular dichroism (XMCD-PEEM). Different reversal mechanisms have been found depending on the substrate miscut angle. Larger terraces (smaller miscut angles) lead to a higher nucleation density and stronger domain wall pinning. The width of domain walls with respect to the size of the terraces seems to play an important role in the reversal. We used the element selectivity of XMCD-PEEM to reveal the strong influence of the stray field of domain walls in the hard magnetic layer on the magnetic switching of the soft magnetic layer.
- Publication:
-
Physical Review B
- Pub Date:
- November 2006
- DOI:
- 10.1103/PhysRevB.74.184419
- arXiv:
- arXiv:cond-mat/0610174
- Bibcode:
- 2006PhRvB..74r4419R
- Keywords:
-
- 75.60.Jk;
- 75.60.Ch;
- 75.70.-i;
- 85.70.Kh;
- Magnetization reversal mechanisms;
- Domain walls and domain structure;
- Magnetic properties of thin films surfaces and interfaces;
- Magnetic thin film devices: magnetic heads;
- domain-motion devices etc.;
- Condensed Matter - Other Condensed Matter
- E-Print:
- 8 Pages, 7 Figures