Ab initio study of the nonlinear optics of III-V semiconductors in the terahertz regime
Abstract
We compute from first principles the infrared dispersion of the nonlinear susceptibility χ(2) in zinc-blende semiconductors. At terahertz frequencies the nonlinear susceptibility depends not only on the purely electronic response χ∞(2) , but also on three other parameters C1 , C2 , and C3 describing the contributions from ionic motion. They relate to the TO Raman polarizability, the second-order displacement-induced dielectric polarization, and the third-order lattice potential. Contrary to previous theory, we find that mechanical anharmonicity (C3) dominates over electrical anharmonicity (C2) , which is consistent with recent experiments on GaAs. We predict that the sharp minimum in the intensity of second-harmonic generation recently observed for GaAs between ωTO/2 and ωTO does not occur for several other III-V compounds.
- Publication:
-
Physical Review B
- Pub Date:
- December 2006
- DOI:
- 10.1103/PhysRevB.74.245204
- arXiv:
- arXiv:cond-mat/0608640
- Bibcode:
- 2006PhRvB..74x5204R
- Keywords:
-
- 78.30.Fs;
- 71.36.+c;
- 78.20.Jq;
- 42.65.An;
- III-V and II-VI semiconductors;
- Polaritons;
- Electrooptical effects;
- Optical susceptibility hyperpolarizability;
- Condensed Matter - Materials Science
- E-Print:
- 9 pages, 3 figures