Spin-dependent transport in p+-CdBxF2-x - n-CdF2 planar structures
Abstract
The CV measurements and tunneling spectroscopy are used to study the ballistic transport of the spin-polarized holes by varying the value of the Rashba spin-orbit interaction (SOI) in the p-type quantum well prepared on the surface of the n-CdF2langleYrangle bulk crystal. The findings of the hole conductance oscillations in the plane of the p-type quantum well that are due to the variations of the Rashba SOI are shown to be evidence of the spin transistor effect, with the amplitude of the oscillations close to e2/h.
- Publication:
-
Journal of Physics Conference Series
- Pub Date:
- March 2007
- DOI:
- 10.1088/1742-6596/61/1/013
- arXiv:
- arXiv:cond-mat/0608631
- Bibcode:
- 2007JPhCS..61...61B
- Keywords:
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- Condensed Matter - Mesoscale and Nanoscale Physics;
- Condensed Matter - Strongly Correlated Electrons
- E-Print:
- 5 pages, 6 figures