Gate-controlled nuclear magnetic resonance in an AlGaAs /GaAs quantum Hall device
Abstract
The authors study the resistively detected nuclear magnetic resonance (NMR) in an AlGaAs /GaAs quantum Hall device with a side gate. The strength of the hyperfine interaction between electron and nuclear spins is modulated by tuning a position of the two-dimensional electron systems with respect to the polarized nuclear spins using the side-gate voltages. The NMR frequency is systematically controlled by the gate-tuned technique in a semiconductor device.
- Publication:
-
Applied Physics Letters
- Pub Date:
- November 2006
- DOI:
- 10.1063/1.2387895
- arXiv:
- arXiv:cond-mat/0608237
- Bibcode:
- 2006ApPhL..89t2111M
- Keywords:
-
- 85.30.-z;
- Semiconductor devices;
- Condensed Matter - Mesoscopic Systems and Quantum Hall Effect;
- Condensed Matter - Materials Science
- E-Print:
- 3 pages, 4 figures, submitted to Appl. Phys. Lett