Hole-driven MIT theory, Mott transition in VO 2, MoBRiK device
Abstract
For inhomogeneous high- Tc superconductors, hole-driven metal-insulator transition (MIT) theory explains that the gradual increase of conductivity with increasing hole doping is due to inhomogeneity with the local Mott system undergoing the first-order MIT and the local non-Mott system. For VO 2, a monoclinic and correlated metal (MCM) phase showing the linear characteristic as evidence of the Mott MIT is newly observed by applying electric field and temperature. The structural phase transition occurs between MCM and Rutile metal phases. Devices using the MIT are named MoBRiK.
- Publication:
-
Physica C Superconductivity
- Pub Date:
- September 2007
- DOI:
- 10.1016/j.physc.2007.03.356
- arXiv:
- arXiv:cond-mat/0607577
- Bibcode:
- 2007PhyC..460.1076K
- Keywords:
-
- Condensed Matter - Strongly Correlated Electrons;
- Condensed Matter - Superconductivity
- E-Print:
- 2 pages, 1 figures, This was presented in the 8th International Conference on Materials and Mechanisms of Superconductivity and High Temperature Superconductors (M2S-HTSC-VIII) held in Dresden Germany from July 9 to July 14, 2006
