Self-assembly of laterally aligned GaAs quantum dot pairs
Abstract
The authors report the fabrication of self-assembled, strain-free GaAs /Al0.27Ga0.73As quantum dot pairs which are laterally aligned in the growth plane, utilizing the droplet epitaxy technique and the anisotropic surface potentials of the GaAs (100) surface for the migration of Ga adatoms. Photoluminescence spectra from a single quantum dot pair, consisting of a doublet, have been observed. Finite element energy level calculations of a model quantum dot pair are also presented.
- Publication:
-
Applied Physics Letters
- Pub Date:
- September 2006
- DOI:
- 10.1063/1.2354007
- arXiv:
- arXiv:cond-mat/0607549
- Bibcode:
- 2006ApPhL..89k3115Y
- Keywords:
-
- 81.16.Dn;
- 68.65.Hb;
- 66.30.Jt;
- 78.55.Cr;
- Self-assembly;
- Quantum dots;
- Diffusion of impurities;
- III-V semiconductors;
- Condensed Matter - Materials Science
- E-Print:
- 4 pages, 3 figures, submitted to Appl. Phys. Lett