Ballistic transport in induced one-dimensional hole systems
Abstract
The authors have fabricated and studied a ballistic one-dimensional p-type quantum wire using an undoped AlGaAs /GaAs heterostructure. The absence of modulation doping eliminates remote ionized impurity scattering and allows high mobilities to be achieved over a wide range of hole densities and, in particular, at very low densities where carrier-carrier interactions are strongest. The device exhibits clear quantized conductance plateaus with highly stable gate characteristics. These devices provide opportunities for studying spin-orbit coupling and interaction effects in mesoscopic hole systems in the strong interaction regime where rs>10.
- Publication:
-
Applied Physics Letters
- Pub Date:
- August 2006
- DOI:
- arXiv:
- arXiv:cond-mat/0607509
- Bibcode:
- 2006ApPhL..89i2105K
- Keywords:
-
- 73.23.Ad;
- 73.63.Nm;
- 72.10.Fk;
- 72.20.Fr;
- 71.70.Ej;
- Ballistic transport;
- Quantum wires;
- Scattering by point defects dislocations surfaces and other imperfections;
- Low-field transport and mobility;
- piezoresistance;
- Spin-orbit coupling Zeeman and Stark splitting Jahn-Teller effect;
- Condensed Matter - Mesoscopic Systems and Quantum Hall Effect
- E-Print:
- 6 pages, 4 figures (accepted to Applied Physics Letters)