Low-Energy Theory of Disordered Graphene
Abstract
At low values of external doping, graphene displays a wealth of unconventional transport properties. Perhaps most strikingly, it supports a robust “metallic” regime, with universal conductance of the order of the conductance quantum. We here apply a combination of mean-field and bosonization methods to explore the large scale transport properties of the system. We find that, irrespective of the doping level, disordered graphene is subject to the common mechanisms of Anderson localization. However, at low doping a number of renormalization mechanisms conspire to protect the conductivity of the system, to an extend that strong localization may not be seen even at temperatures much smaller than those underlying present experimental work.
- Publication:
-
Physical Review Letters
- Pub Date:
- December 2006
- DOI:
- 10.1103/PhysRevLett.97.236802
- arXiv:
- arXiv:cond-mat/0607247
- Bibcode:
- 2006PhRvL..97w6802A
- Keywords:
-
- 73.23.-b;
- 72.15.Rn;
- Electronic transport in mesoscopic systems;
- Localization effects;
- Condensed Matter - Mesoscopic Systems and Quantum Hall Effect
- E-Print:
- 4 pages