Shot noise of a multiwalled carbon nanotube field effect transistor

We have investigated shot noise in a 6-nm -diameter, semiconducting multiwalled carbon nanotube field effect transistor at 4.2K over the frequency range of 600-950MHz . We find a transconductance of 3-3.5μS for optimal positive and negative source-drain voltages V . For the gate referred input voltage noise, we obtain 0.2 and 0.3μV/Hz for V>0 and V<0 , respectively. As effective charge noise, this corresponds to (2-3)×10^-5e/Hz .