Spin injection from perpendicular magnetized ferromagnetic δ-MnGa into (Al,Ga)As heterostructures
Abstract
Electrical spin injection from ferromagnetic δ-MnGa into an (Al,Ga)As p-i-n light-emitting diode (LED) is demonstrated. The δ-MnGa layers show strong perpendicular magnetocrystalline anisotropy, enabling detection of spin injection at remanence, without an applied magnetic field. The bias and temperature dependence of the spin injection are found to be qualitatively similar to Fe-based spin LED devices. A Hanle effect is observed and demonstrates complete depolarization of spins in the semiconductor in a transverse magnetic field.
- Publication:
-
Applied Physics Letters
- Pub Date:
- September 2006
- DOI:
- 10.1063/1.2349833
- arXiv:
- arXiv:cond-mat/0606013
- Bibcode:
- 2006ApPhL..89k2511A
- Keywords:
-
- 72.25.Hg;
- 72.25.Mk;
- 72.25.Ba;
- 72.25.Dc;
- 75.50.Cc;
- 85.30.Kk;
- Electrical injection of spin polarized carriers;
- Spin transport through interfaces;
- Spin polarized transport in metals;
- Spin polarized transport in semiconductors;
- Other ferromagnetic metals and alloys;
- Junction diodes;
- Condensed Matter - Materials Science
- E-Print:
- 4 pages, 3 figures