Electric-dipole-induced spin resonance in disordered semiconductors
Abstract
One of the hallmarks of spintronics is the control of magnetic moments by electric fields enabled by strong spin-orbit interaction (SOI) in semiconductors. A powerful way of manipulating spins in such structures is electric-dipole-induced spin resonance (EDSR), where the radio-frequency fields driving the spins are electric, not magnetic as in standard paramagnetic resonance. Here, we present a theoretical study of EDSR for a two-dimensional electron gas in the presence of disorder, where random impurities not only determine the electric resistance but also the spin dynamics through SOI. Considering a specific geometry with the electric and magnetic fields parallel and in-plane, we show that the magnetization develops an out-of-plane component at resonance that survives the presence of disorder. We also discuss the spin Hall current generated by EDSR. These results are derived in a diagrammatic approach, with the dominant effects coming from the spin vertex correction, and the optimal parameter regime for observation is identified.
- Publication:
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Nature Physics
- Pub Date:
- March 2006
- DOI:
- 10.1038/nphys238
- arXiv:
- arXiv:cond-mat/0605735
- Bibcode:
- 2006NatPh...2..195D
- Keywords:
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- Condensed Matter - Mesoscopic Systems and Quantum Hall Effect
- E-Print:
- Nature Physics 2, 195-199 (2006)