Carrier relaxation mechanisms in self-assembled (In,Ga)As/GaAs quantum dots: Efficient P→S Auger relaxation of electrons
Abstract
We calculate the P -shell-to- S -shell decay lifetime τ(P→S) of electrons in lens-shaped self-assembled (In,Ga)As/GaAs dots due to Auger electron-hole scattering within an atomistic pseudopotential-based approach. We find that this relaxation mechanism leads to fast decay of τ(P→S)∼1-7ps for dots of different sizes. Our calculated Auger-type P -shell-to- S -shell decay lifetimes τ(P→S) compare well to data in (In,Ga)As/GaAs dots, showing that as long as both electrons and holes are present there is no need for an alternative polaron mechanism.
- Publication:
-
Physical Review B
- Pub Date:
- August 2006
- DOI:
- arXiv:
- arXiv:cond-mat/0605003
- Bibcode:
- 2006PhRvB..74g5403N
- Keywords:
-
- 73.21.La;
- 76.60.Es;
- 73.22.-f;
- Quantum dots;
- Relaxation effects;
- Electronic structure of nanoscale materials: clusters nanoparticles nanotubes and nanocrystals;
- Condensed Matter - Materials Science
- E-Print:
- Version published in Phys. Rev. B