Impurity Band Conduction in a High Temperature Ferromagnetic Semiconductor
Abstract
The band structure of a prototypical dilute magnetic semiconductor (DMS), Ga1-xMnxAs, is studied across the phase diagram via infrared and optical spectroscopy. We prove that the Fermi energy (EF) resides in a Mn-induced impurity band (IB). Specifically the changes in the frequency dependent optical conductivity [σ1(ω)] with carrier density are only consistent with EF lying in an IB. Furthermore, the large effective mass (m*) of the carriers inferred from our analysis of σ1(ω) supports this conclusion. Our findings demonstrate that the metal to insulator transition in this DMS is qualitatively different from other III-V semiconductors doped with nonmagnetic impurities. We also provide insights into the anomalous transport properties of Ga1-xMnxAs.
- Publication:
-
Physical Review Letters
- Pub Date:
- August 2006
- DOI:
- 10.1103/PhysRevLett.97.087208
- arXiv:
- arXiv:cond-mat/0603851
- Bibcode:
- 2006PhRvL..97h7208B
- Keywords:
-
- 75.50.Pp;
- 71.30.+h;
- 78.30.-j;
- Magnetic semiconductors;
- Metal-insulator transitions and other electronic transitions;
- Infrared and Raman spectra;
- Condensed Matter - Strongly Correlated Electrons;
- Condensed Matter - Materials Science
- E-Print:
- 4 pages, 4 figures