First-principles investigation of transition-metal-doped group-IV semiconductors: RxY1-x (R=Cr,Mn,Fe;Y=Si,Ge)
Abstract
A number of transition-metal- (TM) doped group-IV semiconductors, RxY1-x (R=Cr,Mn,Fe;Y=Si,Ge) , have been studied by the first-principles calculations. The results obtained show that antiferromagnetic (AFM) order is energetically more favored than ferromagnetic (FM) order in Cr-doped Ge and Si with x=0.03125 and 0.0625. In 6.25% Fe-doped Ge, the FM interaction dominates in all ranges of R-R distances, while for Fe-doped Ge at 3.125% and Fe-doped Si at both concentrations of 3.125% and 6.25%, only in a short R-R range can the FM states exist. In the Mn-doped case, the Ruderman-Kittel-Kasuya-Yoshida-like mechanism seems to be suitable for the Ge host matrix, while for the Mn-doped Si, the short-range AFM interaction competes with the long-range FM interaction. The different origin of the magnetic orders in these diluted magnetic semiconductors (DMS’s) makes the microscopic mechanism of the ferromagnetism in the DMS’s more complex and attractive.
- Publication:
-
Physical Review B
- Pub Date:
- January 2005
- DOI:
- 10.1103/PhysRevB.71.035201
- arXiv:
- arXiv:cond-mat/0603782
- Bibcode:
- 2005PhRvB..71c5201W
- Keywords:
-
- 75.50.Pp;
- 71.55.Cn;
- Magnetic semiconductors;
- Elemental semiconductors;
- Condensed Matter - Materials Science
- E-Print:
- 14 pages, 2 figures, 6 tables