Inverted spin polarization of Heusler alloys for spintronic devices
Abstract
A magnetic logic concept overcomes the major limitations of field programmable gate arrays while having a 50% smaller unit cell than conventional designs utilizing magnetic tunnel junctions with one Heusler alloy electrode. These show positive and negative tunneling magnetoresistance values at different bias voltages at room temperature which generally add an additional degree of freedom to all spintronic devices.
- Publication:
-
Applied Physics Letters
- Pub Date:
- July 2006
- DOI:
- 10.1063/1.2219333
- arXiv:
- arXiv:cond-mat/0603616
- Bibcode:
- 2006ApPhL..89a2502T
- Keywords:
-
- 85.75.-d;
- 85.70.Kh;
- 75.70.Cn;
- 72.25.Mk;
- Magnetoelectronics;
- spintronics: devices exploiting spin polarized transport or integrated magnetic fields;
- Magnetic thin film devices: magnetic heads;
- domain-motion devices etc.;
- Magnetic properties of interfaces;
- Spin transport through interfaces;
- Condensed Matter - Materials Science