Doping of Ce in T-La2CuO4 : Rigorous test for electron-hole symmetry for high- Tc superconductivity

We report that Ce doping was achieved in La₂CuO₄ with the K₂NiF₄(T) structure for the first time by molecular beam epitaxy. A synthesis temperature of as low as ∼ 630°C and an appropriate substrate choice, i.e. , (001)LaSrGaO₄(a_s=3.843Å) , enabled us to incorporate Ce into the K₂NiF₄ lattice and to obtain Ce-doped T-La_2-xCe_xCuO₄ up to xtilde 0.06 . The doping of Ce makes T-La₂CuO₄ more insulating, which is in sharp contrast to Sr (or Ba) doping in T-La₂CuO₄ , which makes the compound metallic and superconducting. The observed smooth increase in resistivity from the hole-doped side (T-La_2-xSr_xCuO₄) to the electron-doped side (T-La_2-xCe_xCuO₄) indicates that the electron-hole symmetry is broken in the T -phase materials.