Electric-field inversion asymmetry: Rashba and Stark effects for holes in resonant tunneling devices
Abstract
We report electric-field-induced modulation of the spin splitting during the charging and discharging processes of a p -type GaAs/AlAs double-barrier resonant-tunneling diode under an applied bias and magnetic field. In addition to the conventional Zeeman effect, we find experimental evidence of excitonic spin splitting produced by a combination of the Rashba spin-orbit interaction, the Stark effect, and the charge accumulation. The abrupt changes in the photoluminescence with the applied bias provide information about charge accumulation effects in the device.
- Publication:
-
Physical Review B
- Pub Date:
- July 2006
- DOI:
- arXiv:
- arXiv:cond-mat/0601421
- Bibcode:
- 2006PhRvB..74d1305D
- Keywords:
-
- 71.70.Ej;
- 78.55.-m;
- 78.66.-w;
- 78.67.-n;
- Spin-orbit coupling Zeeman and Stark splitting Jahn-Teller effect;
- Photoluminescence properties and materials;
- Optical properties of specific thin films;
- Optical properties of low-dimensional mesoscopic and nanoscale materials and structures;
- Condensed Matter - Mesoscopic Systems and Quantum Hall Effect;
- Condensed Matter - Materials Science
- E-Print:
- 4 pages, 2 figures