Negative differential conductance and magnetoresistance oscillations due to spin accumulation in ferromagnetic double-island devices
Abstract
Spin-dependent electronic transport in magnetic double-island devices is considered, theoretically, in the sequential tunneling regime. Electric current and tunnel magnetoresistance are analyzed as a function of the bias voltage and spin-relaxation time in the islands. It is shown that the interplay of spin accumulation on the islands and charging effects leads to periodic modification of the differential conductance and tunnel magnetoresistance. For a sufficiently long spin-relaxation time, the modulations are associated with periodic oscillations of the sign of both the tunnel magnetoresistance and differential conductance.
- Publication:
-
Physical Review B
- Pub Date:
- January 2006
- DOI:
- 10.1103/PhysRevB.73.033409
- arXiv:
- arXiv:cond-mat/0601069
- Bibcode:
- 2006PhRvB..73c3409W
- Keywords:
-
- 72.25.-b;
- 72.20.My;
- 73.23.Hk;
- 85.75.-d;
- Spin polarized transport;
- Galvanomagnetic and other magnetotransport effects;
- Coulomb blockade;
- single-electron tunneling;
- Magnetoelectronics;
- spintronics: devices exploiting spin polarized transport or integrated magnetic fields;
- Condensed Matter - Mesoscopic Systems and Quantum Hall Effect
- E-Print:
- Phys. Rev. B 73, 033409 (2006)