Effect of the triplet state on the random telegraph signal in Si n -MOSFETs
Abstract
We report on the static magnetic field dependence of the random telegraph signal in a submicrometer silicon n -metal-oxide-semiconductor field-effect transistor. Using intense magnetic fields and low temperatures, we find that the characteristic time ratio changes by three orders of magnitude when the field increases from 0to12T . Similar behavior is found when the static field is either in plane or perpendicular to the two-dimensional electron gas. The experimental data deviate from a pure exponential trend and can be explained by considering a model that includes the triplet state of the trapping center and the polarization of the channel electron gas.
- Publication:
-
Physical Review B
- Pub Date:
- July 2006
- DOI:
- 10.1103/PhysRevB.74.033309
- arXiv:
- arXiv:cond-mat/0512692
- Bibcode:
- 2006PhRvB..74c3309P
- Keywords:
-
- 73.50.Td;
- 72.25.Dc;
- 82.20.Xr;
- Noise processes and phenomena;
- Spin polarized transport in semiconductors;
- Quantum effects in rate constants;
- Condensed Matter - Mesoscopic Systems and Quantum Hall Effect
- E-Print:
- 3.3 pages, 3 figures