Metal insulator transition in the In/Si(1 1 1) surface
Abstract
The metal-insulator transition observed in the In/Si(1 1 1)-4 × 1 reconstruction is studied by means of ab initio calculations of a simplified model of the surface. Different surface bands are identified and classified according to their origin and their response to several structural distortions. We support the, recently proposed [C. González, J. Ortega, F. Flores, New J. Phys. 7 (2005) 100], combination of a shear and a Peierls distortions as the origin of the metal-insulator transition. Our results also seem to favor an electronic driving force for the transition.
- Publication:
-
Surface Science
- Pub Date:
- September 2006
- DOI:
- 10.1016/j.susc.2006.01.092
- arXiv:
- arXiv:cond-mat/0512613
- Bibcode:
- 2006SurSc.600.3821R
- Keywords:
-
- Condensed Matter - Materials Science
- E-Print:
- Presented in the 23 European Conference in Surface Science, Berlin, September 2005. Submitted to Surface Science (proceedings of the conference) in August 2005