Doping-dependent charge injection and band alignment in organic field-effect transistors
Abstract
We have studied metal/organic semiconductor charge injection in poly(3-hexylthiophene) (P3HT) field-effect transistors with Pt and Au electrodes as a function of annealing in a vacuum. At low impurity dopant densities, Au/P3HT contact resistances increase and become nonohmic. In contrast, Pt/P3HT contacts remain ohmic even at far lower doping. Ultraviolet photoemission spectroscopy (UPS) reveals that metal/P3HT band alignment shifts dramatically as samples are dedoped, leading to an increased injection barrier for holes, with a greater shift for Au/P3HT. These results demonstrate that doping can drastically alter band alignment and the charge injection process at metal/organic interfaces.
- Publication:
-
Physical Review B
- Pub Date:
- December 2005
- DOI:
- 10.1103/PhysRevB.72.235302
- arXiv:
- arXiv:cond-mat/0512318
- Bibcode:
- 2005PhRvB..72w5302H
- Keywords:
-
- 73.30.+y;
- 73.61.Jc;
- 73.61.Ph;
- Surface double layers Schottky barriers and work functions;
- Amorphous semiconductors;
- glasses;
- Polymers;
- organic compounds;
- Condensed Matter - Mesoscopic Systems and Quantum Hall Effect;
- Condensed Matter - Disordered Systems and Neural Networks
- E-Print:
- 5 pages, 4 figures