Electrically Detected Electron Spin Resonance in a High-Mobility Silicon Quantum Well
Abstract
The resistivity change due to electron spin resonance (ESR) absorption is investigated in a high-mobility two-dimensional electron system formed in a Si/SiGe heterostructure. Results for a specific Landau level configuration demonstrate that the primary cause of the ESR signal is a reduction of the spin polarization, not the effect of electron heating. The longitudinal spin relaxation time T1 is obtained to be of the order of 1 ms in an in-plane magnetic field of 3.55 T. The suppression of the effect of the Rashba fields due to high-frequency spin precession explains the very long T1.
- Publication:
-
Physical Review Letters
- Pub Date:
- August 2006
- DOI:
- arXiv:
- arXiv:cond-mat/0512041
- Bibcode:
- 2006PhRvL..97f6602M
- Keywords:
-
- 72.25.Rb;
- 73.21.Fg;
- 73.43.-f;
- 76.30.-v;
- Spin relaxation and scattering;
- Quantum wells;
- Quantum Hall effects;
- Electron paramagnetic resonance and relaxation;
- Condensed Matter - Mesoscopic Systems and Quantum Hall Effect;
- Condensed Matter - Strongly Correlated Electrons
- E-Print:
- to be published in Phys. Rev. Lett