Charge Imbalance Effects on Interlayer Hopping and Fermi Surfaces in Multilayered High-Tc Cuprates

We study doping dependence of interlayer hoppings, t_\bot, in multilayered cuprates with four or more CuO₂ planes in a unit cell. When the double occupancy is forbidden in the plane, an effective amplitude of t_\bot in the Gutzwiller approximation is shown to be proportional to the square root of the product of doping rates in adjacent two planes, i.e., t^eff_\bot\propto t_\bot\sqrt{δ₁δ₂}, where δ₁ and δ₂ represent the doping rates of the two planes. More than three-layered cuprates have two kinds of CuO₂ planes, i.e., inner- and outer planes (IP and OP), resulting in two different values of t^eff_\bot, i.e., t^eff_\bot1\propto t_\bot\sqrt{δ_IPδ_IP} between IP’s, and t^eff_\bot2\propto t_\bot\sqrt{δ_IPδ_OP} between IP and OP. Fermi surfaces are calculated in the four-layered t-t'-t''-J model by the mean-field theory. The order parameters, the renormalization factor of t_\bot, and the site-potential making the charge imbalance between IP and OP are self-consistently determined for several doping rates. We show the interlayer splitting of the Fermi surfaces, which may be observed in the angle resolved photoemission spectroscopy measurement.