Polarization effects in the channel of an organic field-effect transistor
Abstract
We present the results of our calculation of the effects of dynamical coupling of a charge carrier to the electronic polarization and the field-induced lattice displacements at the gate interface of an organic field-effect transistor (OFET). We find that these interactions reduce the effective bandwidth of the charge carrier in the quasi-two-dimensional channel of a pentacene transistor by a factor of 2 from its bulk value when the gate is a high-permittivity dielectric such as (Ta2O5), while this reduction essentially vanishes using a polymer gate insulator. These results point to carrier effective bandwidth as a possible trigger of the dielectric effects on the mobility reported recently in OFETs.
- Publication:
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Journal of Applied Physics
- Pub Date:
- July 2006
- DOI:
- 10.1063/1.2214363
- arXiv:
- arXiv:cond-mat/0510751
- Bibcode:
- 2006JAP...100b3702H
- Keywords:
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- 85.30.Tv;
- Field effect devices;
- Condensed Matter - Other Condensed Matter
- E-Print:
- 19 pages, 3 figures