An ion-implanted silicon single-electron transistor
Abstract
We report on the fabrication and electrical characterization at millikelvin temperatures of a novel silicon single-electron transistor (Si-SET). The island and source-drain leads of the Si-SET are formed by the implantation of phosphorus ions to a density above the metal-insulator-transition, with the tunnel junctions created by undoped regions. Surface gates above each of the tunnel junctions independently control the tunnel coupling between the Si-SET island and leads. The device shows periodic Coulomb blockade with a charging energy e$^2$/2C$_\Sigma$ $\sim$ 250 $\mu$eV, and demonstrates a reproducible and controllable pathway to a silicon-based SET using CMOS processing techniques.
- Publication:
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arXiv e-prints
- Pub Date:
- October 2005
- DOI:
- 10.48550/arXiv.cond-mat/0510373
- arXiv:
- arXiv:cond-mat/0510373
- Bibcode:
- 2005cond.mat.10373C
- Keywords:
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- Condensed Matter - Mesoscopic Systems and Quantum Hall Effect
- E-Print:
- 3 pages, 3 figures