Tunneling magnetoresistance in devices based on epitaxial NiMnSb with uniaxial anisotropy
Abstract
We demonstrate tunnel magnetoresistance junctions based on a trilayer system consisting of an epitaxial NiMnSb, an aluminum oxide, and a CoFe trilayer. The junctions show a tunneling magnetoresistance of ΔR/R of 8.7% at room temperature which increases to 14.7% at 4.2 K. The layers show a clear separate switching and a small ferromagnetic coupling. A uniaxial in-plane anisotropy in the NiMnSb layer leads to different switching characteristics depending on the direction in which the magnetic field is applied, an effect which can be used for sensor applications.
- Publication:
-
Journal of Applied Physics
- Pub Date:
- February 2006
- DOI:
- 10.1063/1.2171782
- arXiv:
- arXiv:cond-mat/0509538
- Bibcode:
- 2006JAP....99c6110L
- Keywords:
-
- 75.70.Cn;
- 75.30.Gw;
- 75.50.Bb;
- Magnetic properties of interfaces;
- Magnetic anisotropy;
- Fe and its alloys;
- Condensed Matter - Materials Science;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 8 pages, 3 figures, submitted to Appl. Phys. Lett