The role of stress and diffusion in structure formation in semiconductors
Abstract
This dissertation addresses two aspects of the theory and simulation of stress-diffusion coupling in semiconductors. The first part is a study of the role of kinetics in the formation of pits in stressed thin films. The second part describes how atomic-scale calculations can be used to extract the thermodynamic and elastic properties of point-defects. For both aspects, there exists an interaction between phenomena at the atomic and macroscopic scales and the formation of both point-defects and surface features depends on the stress state of the system.
- Publication:
-
arXiv e-prints
- Pub Date:
- September 2005
- DOI:
- 10.48550/arXiv.cond-mat/0509532
- arXiv:
- arXiv:cond-mat/0509532
- Bibcode:
- 2005cond.mat..9532B
- Keywords:
-
- Condensed Matter - Materials Science
- E-Print:
- 157 pages, PhD dissertation