How ripples turn into dots: Modeling ion-beam erosion under oblique incidence
Abstract
Pattern formation on semiconductor surfaces induced by low energetic ion-beam erosion under normal and oblique incidence is theoretically investigated using a continuum model in form of a stochastic, nonlocal, anisotropic Kuramoto-Sivashinsky equation. Depending on the size of the parameters, this model exhibits hexagonally ordered dot, ripple, less regular and even rather smooth patterns. We investigate the transitional behavior between such states and suggest how transitions can be experimentally detected.
- Publication:
-
EPL (Europhysics Letters)
- Pub Date:
- December 2006
- DOI:
- arXiv:
- arXiv:cond-mat/0509437
- Bibcode:
- 2006EL.....76..884V
- Keywords:
-
- 68.55.Jk;
- 79.20.-m;
- 02.60.Lj;
- Structure and morphology;
- thickness;
- crystalline orientation and texture;
- Impact phenomena;
- Ordinary and partial differential equations;
- boundary value problems;
- Condensed Matter - Materials Science;
- Condensed Matter - Statistical Mechanics
- E-Print:
- 11 pages, 4 figures, submitted for publication, revised version